FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS

被引：100
作者：
AHN, J
TING, W
KWONG, DL
机构：
[1] Department of Electrical and Computer Engineering, University of Texas, Austin, TX.
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期
关键词：
D O I：
10.1109/55.144977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, furnace nitridation of thermal SiO2 in pure N2O ambient for MOS gate dielectric application is presented. N2O-nitrided thermal SiO2 shows much tighter distribution in time-dependent dielectric breakdown (TDDB) characteristics than thermal oxide. MOSFET's with gate dielectric prepared by this method show improved initial performance and enhanced device reliability compared to those with thermal gate oxide. These improvements are attributed to the incorporation of a small amount of nitrogen (approximately 1.5 at .%) at the Si/SiO2 interface without introducing H-related species during N2O nitridation.
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页码：117 / 119
页数：3
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