A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS

被引：582
作者：
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期
关键词：
D O I：
10.1143/JJAP.19.L225
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L225 / L227
页数：3
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