HIGH-SPEED INP/GAINAS HETEROJUNCTION PHOTOTRANSISTOR ON INP-ON-SI GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：4

作者：

AINA, O

SERIO, M

MATTINGLY, M

OCONNOR, J

SHASTRY, SK

HILL, DS

SALERNO, JP

FERM, P

机构：

[1] KOPIN CORP,TAUNTON,MA 02780

[2] ALLIED SIGNAL INC,RES & TECHNOL,MORRISTOWN,NJ 07960

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated the first heterojunction phototransistor (HPT) on InP-on-Si. These phototransistors, based on the InP/GaInAs heterojunction, have optical gains as high as 125 A/W at 1300 nm and dark currents as low as 300 pA, for a 48 X 64-mu-m HPT. The bandwidth was determined from impulse photoresponse measurements to be 4.4 GHz. The intrinsic bandwidth was estimated from the zero bias capacitance (0.2 pf) to be as high as 16 GHz.

引用

页码：268 / 270

页数：3

共 4 条

[1]

Ebbinghaus G., 1989, Chemtronics, V4, P35

[2] FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS [J].