TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR

被引：507

作者：

HERRING, C

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1955年 / 34卷 / 02期

关键词：

D O I：

10.1002/j.1538-7305.1955.tb01472.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 290

页数：54

共 29 条

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].

ABELES, B ;

MEIBOOM, S .

PHYSICAL REVIEW, 1954, 95 (01) :31-37

[2] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF HOLES IN GERMANIUM [J].

BENEDICT, TS .

PHYSICAL REVIEW, 1953, 91 (06) :1565-1566

[3] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J].

BENEDICT, TS ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1953, 89 (05) :1152-1153

[4]

BROOKS H, 1951, PHYS REV, V83, P8

[5] THE ELECTRICAL CONDUCTIVITY OF AN IONIZED GAS [J].

COHEN, RS ;

SPITZER, L ;

ROUTLY, PM .

PHYSICAL REVIEW, 1950, 80 (02) :230-238

[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[7] Change of resistance in a magnetic field [J].

Davis, L .

PHYSICAL REVIEW, 1939, 56 (01) :93-98

[8] ANISOTROPY OF CYCLOTRON RESONANCE OF HOLES IN GERMANIUM [J].

DEXTER, RN ;

ZEIGER, HJ ;

LAX, B .

PHYSICAL REVIEW, 1954, 95 (02) :557-558

[9] EFFECTIVE MASSES OF ELECTRONS IN SILICON [J].

DEXTER, RN ;

LAX, B ;

KIP, AF ;

DRESSELHAUS, G .

PHYSICAL REVIEW, 1954, 96 (01) :222-223

[10] EFFECTIVE MASSES OF HOLES IN SILICON [J].

DEXTER, RN ;

LAX, B .

PHYSICAL REVIEW, 1954, 96 (01) :223-224

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