USEFUL DESIGN RELATIONSHIPS FOR THE ENGINEERING OF THERMODYNAMICALLY STABLE STRAINED-LAYER STRUCTURES

被引:29
作者
VAWTER, GA
MYERS, DR
机构
关键词
D O I
10.1063/1.343231
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4769 / 4773
页数:5
相关论文
共 50 条
[31]   ELECTRONIC-STRUCTURES OF IN1-XGAXAS-INP STRAINED-LAYER QUANTUM WELLS [J].
HOUNG, MP ;
CHANG, YC .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) :3092-&
[32]   PLANAR CHANNELING IN GAAS INXGA1-XAS GAAS STRAINED-LAYER STRUCTURES [J].
STEVENS, JLE ;
ROBINSON, BJ ;
DAVIES, JA ;
THOMPSON, DA ;
JACKMAN, TE .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1510-1515
[33]   AUGER RECOMBINATION IN LONG-WAVELENGTH STRAINED-LAYER QUANTUM-WELL STRUCTURES [J].
WANG, J ;
VONALLMEN, P ;
LEBURTON, JP ;
LINDEN, KJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (05) :864-875
[34]   VALENCE-BAND CHARACTERIZATION OF INGAAS GAAS AND GAAS GAASP STRAINED-LAYER STRUCTURES [J].
JONES, ED ;
BIEFELD, RM ;
KLEM, JF ;
LYO, SK ;
OSBOURN, GC .
SURFACE SCIENCE, 1990, 228 (1-3) :330-333
[35]   POLARIZATION-RESOLVED PHOTOLUMINESCENCE OF INAS/GAAS STRAINED-LAYER STRUCTURES ON VARIOUSLY ORIENTED SUBSTRATES [J].
SHIMA, T ;
LEE, JS ;
KUDO, K ;
TANAKA, K ;
NIKI, S ;
YAMADA, A ;
MAKITA, Y .
APPLIED SURFACE SCIENCE, 1994, 75 :164-168
[36]   THERMAL-PROCESSING OF GAASSB-GAAS LOW-DIMENSIONAL STRAINED-LAYER STRUCTURES [J].
HOMEWOOD, KP ;
GILLIN, WP ;
PRITCHARD, RE ;
TRUSCOTT, WS ;
SINGER, KE .
SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (04) :359-361
[37]   Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures [J].
Donetsky, Dmitry ;
Svensson, Stefan P. ;
Vorobjev, Leonid E. ;
Belenky, Gregory .
APPLIED PHYSICS LETTERS, 2009, 95 (21)
[38]   DOUBLE CRYSTAL X-RAY-DIFFRACTION AND TEM OF PARTIALLY RELAXED STRAINED-LAYER STRUCTURES [J].
KIDD, P ;
DIXON, R .
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117) :661-664
[39]   EFFECTS OF STRAINED-LAYER STRUCTURES ON THE THRESHOLD CURRENT-DENSITY OF ALGAINP/GAINP VISIBLE LASERS [J].
HASHIMOTO, J ;
KATSUYAMA, T ;
SHINKAI, J ;
YOSHIDA, I ;
HAYASHI, H .
APPLIED PHYSICS LETTERS, 1991, 58 (09) :879-880
[40]   STUDY OF ERAS/GAAS STRAINED-LAYER STRUCTURES USING OPTICAL-ABSORPTION AND ION CHANNELING [J].
RALSTON, JD ;
FUCHS, F ;
SCHNEIDER, J ;
SCHMALZIN, J .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2176-2180