OPTICAL-PROPERTIES OF (100)-ORIENTED AND (111)-ORIENTED GAINAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：97

作者：

LAURICH, BK

ELCESS, K

FONSTAD, CG

BEERY, JG

MAILHIOT, C

SMITH, DL

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.62.649

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：649 / 652

页数：4

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[1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS
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[8] ELECTROMODULATION OF THE ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF [111]-GROWTH-AXIS SUPERLATTICES
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[9] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES
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[10] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES
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