OPTICAL-PROPERTIES OF (100)-ORIENTED AND (111)-ORIENTED GAINAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：97

作者：

LAURICH, BK

ELCESS, K

FONSTAD, CG

BEERY, JG

MAILHIOT, C

SMITH, DL

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.62.649

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：649 / 652

页数：4

共 20 条

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[7] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES [J].

MAILHIOT, C ;

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[8] ELECTROMODULATION OF THE ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF [111]-GROWTH-AXIS SUPERLATTICES [J].

MAILHIOT, C ;

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PHYSICAL REVIEW B, 1988, 37 (17) :10415-10418

[9] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES [J].

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PHYSICAL REVIEW B, 1986, 33 (12) :8360-8372

[10] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].

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