ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION

被引：206
作者：
HATZAKIS, M
机构：
[1] International Business Machines Corporation, Thomas J. Watson Research Center, New York, Yorktown Heights
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 07期
关键词：
D O I：
10.1149/1.2412145
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The properties of poly-(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one- and half-micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with SiO2. Also, a method for producing high-resolution, defect-free masks through methacrylate resist is presented. © 1969, The Electrochemical Society, Inc. All rights reserved.
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页码：1033 / &
相关论文
共 6 条
[1]   ELECTRON GUN USING LONG-LIFE LANTHANUM HEXABORIDE CATHODE [J].
BROERS, AN .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1991-&
[2]   STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J].
EARLY, JM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12) :1924-1927
[3]   HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].
HALLER, I ;
HATZAKIS, M ;
SRINIVASAN, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) :251-+
[4]   ELECTRON BEAM EXPOSURE OF PHOTORESISTS [J].
THORNLEY, RF ;
SUN, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) :1151-&
[5]  
THORNLEY RFM, 1964, IEEE T, VEC13, P36
[6]  
THORNLEY RFM, 1967, 9 S EL ION LAS BEAM, P94
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