STRAINED INAS/(ALGAIN)AS/INP QUANTUM-WELLS FOR 1.5-2.5 MU-M LASER APPLICATIONS GROWN BY VIRTUAL SURFACTANT MBE

被引：0
|
作者：
PLOOG, KH
TOURNIE, E
机构：
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Strained InAs quantum wells confined by AlxGa0.48-xIn52As barriers on InP substrate (3.2 % mismatch) were fabricated by a new growth technique which prevents islanding of the highly strained InAs layers. Under In-rich conditions (virtual surfactant MBE) strain relaxation is suppressed for kinetic reasons, and InAs/AlxGa0.48-xIn52As interfaces of high structural perfection were obtained even far beyond the critical InAs layer thickness. Spontaneous emission from InAs single quantum wells up to 2.4 mu m at 300 K and stimulated emission from electrically pumped laser structures has been achieved.
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页码：51 / 56
页数：6
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