TRENDS IN CHEMICAL VAPOR-DEPOSITION OF SILICON

被引：0

作者：

BLOEM, J ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C95 / +

共 50 条

[31] EPITAXIAL-GROWTH OF GERMANIUM ON SILICON BY CHEMICAL VAPOR-DEPOSITION
GREEN, ML
ALI, YS
BRASEN, D
WILLENS, RH
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A28 - A28
[32] CHEMICAL VAPOR-DEPOSITION OF HIGH-TEMPERATURE SILICON DIOXIDE
PHILIPOSSIAN, A
SARKOZY, RF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C315 - C315
[33] SILICON EPITAXIAL LAYERS BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
REIF, R
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-): : 45 - INOR
[34] CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE .13.
SCHLICHTING, J
POWDER METALLURGY INTERNATIONAL, 1980, 12 (04): : 196 - 200
[35] CHEMICAL VAPOR-DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON
DALLAPORTA, H
HAMMADI, Z
PIERRISNARD, R
CROS, A
JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 889 - 895
[36] HIGH CHEMICAL VAPOR-DEPOSITION RATES OF EPITAXIAL SILICON LAYERS
BLOEM, J
JOURNAL OF CRYSTAL GROWTH, 1973, 18 (01) : 70 - 76
[37] GROWTH OF MICROCRYSTAL SILICON BY REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION
KIM, SC
JUNG, MH
JANG, J
APPLIED PHYSICS LETTERS, 1991, 58 (03) : 281 - 283
[38] COATINGS OF PYROCARBON AND SILICON-CARBIDE BY CHEMICAL VAPOR-DEPOSITION
VOICE, EH
CHEMICAL ENGINEER-LONDON, 1974, (292): : 785 - 792
[39] THERMODYNAMIC CALCULATIONS FOR THE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE
KINGON, AI
LUTZ, LJ
LIAW, P
DAVIS, RF
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1983, 66 (08) : 558 - 566
[40] INTRACAVITY LASER SPECTROSCOPY - CHEMICAL VAPOR-DEPOSITION OF SILICON FILMS
ATKINSON, GH
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 239 - PHYS

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