FABRICATION AND PROPERTIES OF PLANAR X-BAND GUNN-EFFECT DEVICES

被引：0
作者：
ULLRICH, D
机构：
来源：
ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK | 1972年 / 26卷 / 10期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：455 / &
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共 10 条
[1]  
ATAMAN A, 1971, AEU-ARCH ELEKTRON UB, V25, P396
[2]  
CLARKE CM, 1969, ELECTRON LETTERS, V5, P471
[3]   OHMIC CONTACTS FOR GAAS DEVICES [J].
COX, RH ;
STRACK, H .
SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+
[4]  
HERBST H, 1972, AEU-ARCH ELEKTRON UB, V26, P359
[5]  
HERBST H, TO BE PUBLISHED
[6]  
HERBST H, PRIVATE COMMUNICATIO
[7]   FAILURE MECHANISMS IN GUNN DIODES [J].
JEPPSSON, B ;
MARKLUND, I .
ELECTRONICS LETTERS, 1967, 3 (05) :213-+
[8]  
PARKES EP, 1971, T I ELECT ELECTRON E, VED18, P840
[9]   SMALL-SIGNAL ADMITTANCE OF INSULATOR N-TYPE GALLIUM-ARSENIDE INTERFACE REGION [J].
QUAST, W .
ELECTRONICS LETTERS, 1972, 8 (16) :419-&
[10]   OBSERVATION OF RECOMBINATION RADIATION IN PLANAR GUNN-EFFECT DEVICES [J].
ULLRICH, D .
ELECTRONICS LETTERS, 1971, 7 (08) :193-+
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