A numerical study of high efficiency ultra-thin CdS/CIGS solar cells

被引:17
作者
Benabbas, Sabrina [1 ]
Rouabah, Zahir [1 ]
Heriche, Hocine [1 ]
Chelali, Nacer-Eddine [1 ]
机构
[1] Univ Bordj Bou Arreridj, Mat & Elect Syst Lab, El Anasser, Bordj Bou Arrer, Algeria
关键词
BSF; buffer layer; CdS; CIGS; SCAPS-1D;
D O I
10.1080/20421338.2015.1118929
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
This work aims to improve the performance of solar cells with structure SnO2/CdS/CIGS/Mo by using the solar cell capacitance simulator (SCAPS-1D). Our idea is to insert the SnS layer between the absorber layer CIGS and the Mo (molybdenum) back contact. A maximum conversion efficiency of 24.45% (V-OC = 0.78 V, J(SC) = 38.66 mA/cm(2), FF = 0.80) was achieved with 1 mu m-CIGS absorber layer, 50 nm-CdS buffer layer, 200 nm of ZnO window layer and 300 nm of SnS BSF layer. This study shows that ultra-thin CIGS solar cells with a BSF layer give better results compared to the work of Gloeckler (2005), which presented an efficiency of 19.62% (V-OC = 0.61 V, J(SC) = 39.23 mA/cm(2), FF = 0.81) with 3 mu m thickness of CIGS in the structure ZnO/CdS/CIGS/Mo. In addition to this, the cells' stability with temperature was studied and analysed.
引用
收藏
页码:340 / 342
页数:3
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