ELECTRON-PARAMAGNETIC RESONANCE STUDY OF THERMAL DONORS IN FE-DOPED INP

被引：20
作者：
VONBARDELEBEN, HJ
STIEVENARD, D
KAINOSHO, K
ODA, O
机构：
[1] INST SUPER ELECTR N,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
[2] NIPPON MIN CO LTD,ELECTR MAT & COMPONENTS RES LAB,TODA,SAITAMA 335,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期
关键词：
D O I：
10.1063/1.349735
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of thermal annealing of semi-insulating InP wafers in the 660-820-degrees-C temperature range under SiN(x) capping condition is studied by electron paramagnetic resonance (EPR) spectroscopy. The annealing leads to the formation of electrically active, deep thermal donors with total defect concentrations up to 10(16) cm-3. The thermal donors are of intrinsic origin. By transient EPR spectroscopy the activation energies for electron emission of the dominant thermal donors were determined to be 0.40 and 0.14 eV, respectively.
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页码：7392 / 7396
页数：5
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