NATURE AND ANNEALING BEHAVIOR OF DISORDERS IN ION-IMPLANTED SILICON

被引：21
作者：
TOKUYAMA, T
MIYAO, M
YOSHIHIRO, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 08期
关键词：
D O I：
10.1143/JJAP.17.1301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1301 / 1315
页数：15
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