CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON

被引:133
作者
DAVIES, JA
DENHARTOG, J
WHITTON, JL
机构
[1] Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited, Chalk River, Ont.
来源
PHYSICAL REVIEW | 1968年 / 165卷 / 02期
关键词
D O I
10.1103/PhysRev.165.345
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Wide-angle Rutherford scattering has been used to investigate experimentally the channeling behavior of several projectiles (H1, He4, C12, O16, and Cl35) in tungsten crystals in the energy region 2 to 30 MeV; the study has also been extended to silicon crystals, using a 3.0-MeV H1 beam. The observed critical angles and minimum scattering yields are compared with theoretical predictions. In general, the agreement is excellent. In both W and Si, precise energy analysis of the scattered beam has also provided detailed information on the depth and temperature dependence of channeling; a marked difference is observed between the planar and axial channeling processes. Some preliminary measurements in Au and UO2 crystals are included. © 1968 The American Physical Society.
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页码:345 / +
页数:1
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