THE PHENOMENON OF ELECTRON ROLLOUT FOR ENERGY DEPOSITION AND DEFECT GENERATION IN IRRADIATED MOS DEVICES

被引:19
作者
BROWN, DB
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D O I
10.1109/TNS.1986.4334585
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1240 / 1244
页数:5
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