HIGH-EFFICIENCY, HIGH-TEMPERATURE MIDINFRARED (LAMBDA-GREATER-THAN-OR-EQUAL-TO-4-MU-M) INASSB/GASB LASERS

被引：21
作者：
LE, HQ
TURNER, GW
OCHOA, JR
SANCHEZ, A
机构：
[1] Lincoln Laboratory, Massachusetts, Institute of Technology, Lexington
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 23期
关键词：
SEMICONDUCTOR JUNCTION LASERS; LASERS;
D O I：
10.1049/el:19941301
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With 2mum pumping, a 4mum InAsSb/GaSb double heterostructure laser operated at 86.5K yielded 11% slope power efficiency and 16mW CW power. Pulsed operation up to 211K was observed. The threshold and efficiency were studied as functions of temperature and pump wavelength.
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页码：1944 / 1945
页数：2
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