HIGH-EFFICIENCY, HIGH-TEMPERATURE MIDINFRARED (LAMBDA-GREATER-THAN-OR-EQUAL-TO-4-MU-M) INASSB/GASB LASERS

被引：21

作者：

LE, HQ

TURNER, GW

OCHOA, JR

SANCHEZ, A

机构：

[1] Lincoln Laboratory, Massachusetts, Institute of Technology, Lexington

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 23期

关键词：

SEMICONDUCTOR JUNCTION LASERS; LASERS;

D O I：

10.1049/el:19941301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With 2mum pumping, a 4mum InAsSb/GaSb double heterostructure laser operated at 86.5K yielded 11% slope power efficiency and 16mW CW power. Pulsed operation up to 211K was observed. The threshold and efficiency were studied as functions of temperature and pump wavelength.

引用

页码：1944 / 1945

页数：2

共 8 条

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[J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 152 - 154
[6] MANI H, 1990, SPIE, V1362, P38
[7] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE
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[J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
[8] OPTICALLY PUMPED LASER OSCILLATION AT 3.9-MU-M FROM AL0.5GA0.5SB/INAS0.91SB0.09/AL0.5GA0.5SB DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON GASB
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 315 - 317

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