THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES

The homoepitaxial growth of GaN has been achieved by using GaN (0001) bulk substrates for the first time. GaN single crystal films were homoepitaxially grown by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) using trimethylgallium (TMG) and NH3 source gases with a H-2 carrier gas at 1090-degrees-C. The as-grown GaN films were indicated to be of high-quality crystal with good surface morphology. Furthermore, we realized Mg-doped GaN films by homoepitaxial growth in which strong photoluminescence (445 nm) and cathodoluminescence spectra (400 and 445 nm) due to Mg-related levels were observed without the treatment of low energy electron beam irradiation (LEEBI) or thermal annealing.