SCHOTTKY-BARRIER HEIGHT MODIFICATION ON N-TYPE SILICON BY WET CHEMICAL ETCHING

被引：5

作者：

ADEGBOYEGA, GA ^{[1
]}

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 01期

关键词：

D O I：

10.1002/pssa.2211110149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K31 / K35

页数：5

共 15 条

[1] SCHOTTKY CONTACT BARRIER HEIGHT MODIFICATION BY ION-IMPLANTATION OF AL INTO GAAS
AINA, O
PANDE, KP
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1717 - 1721
[2] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE
ASHOK, S
MOGROCAMPERO, A
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49
[3] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3
ASHOK, S
CHOW, TP
BALIGA, BJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 687 - 689
[4] INFLUENCE OF LOW-ENERGY ATOMIC-HYDROGEN ON ARGON-IMPLANTED SILICON SCHOTTKY BARRIERS
ASHOK, S
GIEWONT, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L533 - L535
[5] ASHOK S, 1984, APPL PHYS LETT, V45, P431, DOI 10.1063/1.95247
[6] HIGH-BARRIER AL/P-SI SCHOTTKY DIODES
ASHOK, S
GIEWONT, K
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 462 - 464
[7] A STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF SPUTTERED TI/SI AND SPUTTERED TISI2/SI SCHOTTKY BARRIERS
DEBOSSCHER, W
VANMEIRHAEGHE, RL
DELAERE, A
LAFLERE, WH
CARDON, F
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (05) : 945 - 951
[8] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON
FINETTI, M
SUNI, I
BARTUR, M
BANWELL, T
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 617 - 623
[9] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
ASHOK, S
SINGH, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425
[10] ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING
GRUSELL, E
BERG, S
ANDERSSON, LP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1573 - 1576

← 1 2 →