OPTIMIZATION OF THE CAVITY FOR SILICIDE SCHOTTKY INFRARED DETECTORS

被引：3

作者：

KURIANSKI, JM ^{[1
]}

SHANAHAN, ST ^{[1
]}

THEDEN, U ^{[1
]}

GREEN, MA ^{[1
]}

STORYE, JWV ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,KENSINGTON,NSW 2033,AUSTRALIA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期

关键词：

Optical Devices - Resonators; Cavity - Semiconductor Devices; Schottky Barrier;

D O I：

10.1016/0038-1101(89)90174-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum efficiency of metal-silicide Schottky barrier IR detectors is strongly dependent on the design of the optical cavity behind each detector element. A theoretical optimization of the dielectric thickness for such cavities is described, as are experimental results which confirm the accuracy of the optimization procedure.

引用

页码：97 / 101

页数：5

共 11 条

[1]

ARCHER RJ, 1973, Patent No. 3757123

[2]

Cohen J., 1968, 680651 AIR FORC CAMB

[3]

ELBLAD H, 1982, RCA REV, V43, P569

[4] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[5]

Green M. A., 1987, HIGH EFFICIENCY SILI, P228

[6]

Heavens O. S., 1955, OPTICAL PROPERTIES T, P55

[7] 160X244 ELEMENT PTSI SCHOTTKY-BARRIER IR-CCD IMAGE SENSOR [J].

KOSONOCKY, WF ;

SHALLCROSS, FV ;

VILLANI, TS ;

GROPPE, JV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) :1564-1573

[8]

MOONEY JM, 1986, THESIS U ARIZONA

[9]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P130

[10] THE OPTIMIZATION OF THE OPTICAL CAVITY OF INFRARED SCHOTTKY-BARRIER DETECTORS [J].

WU, JC ;

LUE, JT .

SOLID-STATE ELECTRONICS, 1987, 30 (01) :97-104

← 1 2 →