EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS

被引：112

作者：

FRITZSCHE, H

KASTNER, M

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[3] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 03期

关键词：

D O I：

10.1080/01418637808227669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：285 / 292

页数：8

共 15 条

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[2]

FRITZSCHE H, 1976, STRUCTURE EXCITATION, P178

[3]

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[4]

FRITZSCHE H, 1977, 7TH P INT C AM LIQ S

[5]

KASTNER M, 1978, PHILOS MAG, V37, P127, DOI 10.1080/13642817808245313

[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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[7]

KASTNER M, PHIL MAG

[8] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

[9] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[10] ELECTRONS IN DISORDERED STRUCTURES [J].

MOTT, NF .

ADVANCES IN PHYSICS, 1967, 16 (61) :49-+

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