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AIN SINGLE-CRYSTALS
被引:149
作者
:
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
SLACK, GA
MCNELLY, TF
论文数:
0
引用数:
0
h-index:
0
MCNELLY, TF
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1977年
/ 42卷
/ DEC期
关键词
:
D O I
:
10.1016/0022-0248(77)90246-9
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:560 / 563
页数:4
相关论文
共 6 条
[1]
BOROM MP, 1972, B AM CERAM SOC, V51, P852
[2]
OPTICAL ABSORPTION EDGE OF AIN SINGLE CRYSTALS
[J].
PASTRNAK, J
论文数:
0
引用数:
0
h-index:
0
PASTRNAK, J
;
ROSKOVCO.L
论文数:
0
引用数:
0
h-index:
0
ROSKOVCO.L
.
PHYSICA STATUS SOLIDI,
1968,
26
(02)
:591
-&
[3]
VAPOR-PHASE GROWTH OF SINGLE CRYSTALS OF II-VI COMPOUNDS
[J].
PIPER, WW
论文数:
0
引用数:
0
h-index:
0
PIPER, WW
;
POLICH, SJ
论文数:
0
引用数:
0
h-index:
0
POLICH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(07)
:1278
-&
[4]
NONMETALLIC CRYSTALS WITH HIGH THERMAL-CONDUCTIVITY
[J].
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
机构:
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GE,RES & DEV CTR,SCHENECTADY,NY 12301
SLACK, GA
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(02)
:321
-335
[5]
GROWTH OF HIGH-PURITY AIN CRYSTALS
[J].
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
机构:
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
SLACK, GA
;
MCNELLY, TF
论文数:
0
引用数:
0
h-index:
0
机构:
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
MCNELLY, TF
.
JOURNAL OF CRYSTAL GROWTH,
1976,
34
(02)
:263
-279
[6]
EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
[J].
YIM, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
YIM, WM
;
STOFKO, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
STOFKO, EJ
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
PANKOVE, JI
;
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ETTENBERG, M
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
GILBERT, SL
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:292
-296
←
1
→
共 6 条
[1]
BOROM MP, 1972, B AM CERAM SOC, V51, P852
[2]
OPTICAL ABSORPTION EDGE OF AIN SINGLE CRYSTALS
[J].
PASTRNAK, J
论文数:
0
引用数:
0
h-index:
0
PASTRNAK, J
;
ROSKOVCO.L
论文数:
0
引用数:
0
h-index:
0
ROSKOVCO.L
.
PHYSICA STATUS SOLIDI,
1968,
26
(02)
:591
-&
[3]
VAPOR-PHASE GROWTH OF SINGLE CRYSTALS OF II-VI COMPOUNDS
[J].
PIPER, WW
论文数:
0
引用数:
0
h-index:
0
PIPER, WW
;
POLICH, SJ
论文数:
0
引用数:
0
h-index:
0
POLICH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(07)
:1278
-&
[4]
NONMETALLIC CRYSTALS WITH HIGH THERMAL-CONDUCTIVITY
[J].
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
机构:
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GE,RES & DEV CTR,SCHENECTADY,NY 12301
SLACK, GA
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(02)
:321
-335
[5]
GROWTH OF HIGH-PURITY AIN CRYSTALS
[J].
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
机构:
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
SLACK, GA
;
MCNELLY, TF
论文数:
0
引用数:
0
h-index:
0
机构:
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
MCNELLY, TF
.
JOURNAL OF CRYSTAL GROWTH,
1976,
34
(02)
:263
-279
[6]
EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
[J].
YIM, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
YIM, WM
;
STOFKO, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
STOFKO, EJ
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
PANKOVE, JI
;
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ETTENBERG, M
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
GILBERT, SL
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:292
-296
←
1
→