THERMODYNAMIC ANALYSIS OF THE MOVPE GROWTH OF QUATERNARY-III-V ALLOY SEMICONDUCTORS

被引：33

作者：

KOUKITU, A

SEKI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90366-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：233 / 242

页数：10

共 17 条

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[6] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].

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[7]

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[10] THERMODYNAMIC CALCULATION OF THE VPE GROWTH OF IN1-XGAXASYP1-Y BY THE TRICHLORIDE METHOD [J].

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