MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS

被引：24

作者：

BASS, SJ ^{[1
]}

SKOLNICK, MS ^{[1
]}

CHUDZYNSKA, H ^{[1
]}

SMITH, L ^{[1
]}

机构：

[1] UNIV LONDON QUEEN MARY COLL,LONDON E1 4NS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90031-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：221 / 226

页数：6

共 17 条

[1]

AITCHISON K, 1983, THESIS U LONDON

[2] METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].

BASS, SJ ;

PICKERING, C ;

YOUNG, ML .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :68-75

[3] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J].

BASS, SJ ;

YOUNG, ML .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :311-318

[4] MODIFIED ENTRAINMENT METHOD FOR MEASURING VAPOR-PRESSURES AND HETEROGENEOUS EQUILIBRIUM-CONSTANTS .1. THEORY, AND VALIDATION OF METHOD USING WATER AND LEAD [J].

BATTAT, D ;

FAKTOR, MM ;

GARRETT, I ;

MOSS, RH .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1974, 70 :2267-2279

[5] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP [J].

CAREY, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :89-91

[6]

COLE JM, 1985, I PHYS C SER, V76, P269

[7]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[8]

Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10

[9] PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS [J].

FRY, KL ;

KUO, CP ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :955-957

[10] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

← 1 2 →