GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS

被引:36
作者
DUTTA, NK
NELSON, RJ
机构
关键词
D O I
10.1109/JQE.1982.1071358
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:44 / 49
页数:6
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共 27 条
[21]   GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].
STERN, F .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294
[22]   CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS [J].
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5382-5386
[23]   BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD [J].
SUGIMURA, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :627-635
[24]   NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS [J].
THOMPSON, GHB ;
HENSHALL, GD .
ELECTRONICS LETTERS, 1980, 16 (01) :42-44
[25]   GAIN SPECTRA IN GAINASP-INP PROTON-BOMBARDED STRIPE-GEOMETRY DH LASERS [J].
WALPOLE, JN ;
LIND, TA ;
HSIEH, JJ ;
DONNELLY, JP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :186-192
[26]   THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS [J].
YANO, M ;
NISHI, H ;
TAKUSAGAWA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :571-579
[27]  
YANO M, 1980, J APPL PHYS, V51, P4038