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GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
被引:36
作者
:
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
机构
:
来源
:
IEEE JOURNAL OF QUANTUM ELECTRONICS
|
1982年
/ 18卷
/ 01期
关键词
:
D O I
:
10.1109/JQE.1982.1071358
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:44 / 49
页数:6
相关论文
共 27 条
[21]
GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS
[J].
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
STERN, F
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(02)
:290
-294
[22]
CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
[J].
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
STERN, F
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
:5382
-5386
[23]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
[J].
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
:627
-635
[24]
NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
[J].
THOMPSON, GHB
论文数:
0
引用数:
0
h-index:
0
THOMPSON, GHB
;
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
HENSHALL, GD
.
ELECTRONICS LETTERS,
1980,
16
(01)
:42
-44
[25]
GAIN SPECTRA IN GAINASP-INP PROTON-BOMBARDED STRIPE-GEOMETRY DH LASERS
[J].
WALPOLE, JN
论文数:
0
引用数:
0
h-index:
0
WALPOLE, JN
;
LIND, TA
论文数:
0
引用数:
0
h-index:
0
LIND, TA
;
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
;
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
:186
-192
[26]
THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS
[J].
YANO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
YANO, M
;
NISHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
NISHI, H
;
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
TAKUSAGAWA, M
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(07)
:571
-579
[27]
YANO M, 1980, J APPL PHYS, V51, P4038
←
1
2
3
→
共 27 条
[21]
GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS
[J].
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
STERN, F
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(02)
:290
-294
[22]
CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
[J].
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
STERN, F
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
:5382
-5386
[23]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
[J].
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
:627
-635
[24]
NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
[J].
THOMPSON, GHB
论文数:
0
引用数:
0
h-index:
0
THOMPSON, GHB
;
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
HENSHALL, GD
.
ELECTRONICS LETTERS,
1980,
16
(01)
:42
-44
[25]
GAIN SPECTRA IN GAINASP-INP PROTON-BOMBARDED STRIPE-GEOMETRY DH LASERS
[J].
WALPOLE, JN
论文数:
0
引用数:
0
h-index:
0
WALPOLE, JN
;
LIND, TA
论文数:
0
引用数:
0
h-index:
0
LIND, TA
;
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
;
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
:186
-192
[26]
THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS
[J].
YANO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
YANO, M
;
NISHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
NISHI, H
;
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki
TAKUSAGAWA, M
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(07)
:571
-579
[27]
YANO M, 1980, J APPL PHYS, V51, P4038
←
1
2
3
→