INPLANE POLARIZED OPTICAL INTERCONDUCTION-SUBBAND TRANSITIONS IN QUANTUM-WELLS

被引:14
作者
YANG, RQ [1 ]
机构
[1] CYC TECHNOL,TORONTO,ON,CANADA
关键词
D O I
10.1063/1.113610
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, it has been shown within the framework of a simple one-band model how the in-plane polarized optical interconduction-subband transitions could simply occur in quantum well structures. A novel approach is proposed for manipulating optical properties through the band-gap engineering based on the spatial features of wave functions. The underlying physics and consequences for device applications are discussed.© 1995 American Institute of Physics.
引用
收藏
页码:959 / 961
页数:3
相关论文
共 18 条
[1]  
BASTARD G, 1988, WAVE MECHANICS APPLI
[2]   SATURATION OF INTERSUBBAND TRANSITIONS IN P-TYPE SEMICONDUCTOR QUANTUM WELLS [J].
CHANG, YC ;
JAMES, RB .
PHYSICAL REVIEW B, 1989, 39 (17) :12672-12681
[3]   NORMAL INCIDENCE INFRARED-ABSORPTION FROM INTERSUB-BAND TRANSITIONS IN P-TYPE GALNAS/ALLNAS QUANTUM-WELLS [J].
KATZ, J ;
ZHANG, Y ;
WANG, WI .
ELECTRONICS LETTERS, 1992, 28 (10) :932-934
[4]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[5]  
LANDAU LD, 1965, QUANTUM MECHANICS, pCH3
[6]   EMPIRICAL 2-BAND MODEL FOR QUANTUM-WELLS AND SUPERLATTICES IN AN ELECTRIC-FIELD [J].
LEAVITT, RP .
PHYSICAL REVIEW B, 1991, 44 (20) :11270-11280
[7]  
Levine B.F, 1992, INTERSUBBAND TRANSIT
[8]   NORMAL INCIDENCE HOLE INTERSUBBAND ABSORPTION LONG WAVELENGTH GAAS/ALXGA1-XAS QUANTUM-WELL INFRARED PHOTODETECTORS [J].
LEVINE, BF ;
GUNAPALA, SD ;
KUO, JM ;
PEI, SS ;
HUI, S .
APPLIED PHYSICS LETTERS, 1991, 59 (15) :1864-1866
[9]   ELECTRON INTERSUBBAND NORMAL INCIDENCE ABSORPTION IN INGAAS/GAAS QUANTUM-WELLS [J].
LI, HS ;
KARUNASIRI, RPG ;
CHEN, YW ;
WANG, KL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :922-925
[10]   DEPENDENCE OF ABSORPTION-SPECTRUM AND RESPONSIVITY ON THE UPPER STATE POSITION IN QUANTUM-WELL INTERSUBBAND PHOTODETECTORS [J].
LIU, HC .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :3062-3067