PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON

被引：73

作者：

TSAI, MY

DHEURLE, FM

PETERSSON, CS

JOHNSON, RW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5350 / 5355

页数：6

共 13 条

[1] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J].

ANGILELLO, J ;

BAGLIN, JEE ;

CARDONE, F ;

DEMPSEY, JJ ;

DHEURLE, FM ;

IRENE, EA ;

MACINNES, R ;

PETERSSON, CS ;

SAVOY, R ;

SEGMULLER, AP ;

TIERNEY, E .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :59-93

[2] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].

BAGLIN, J ;

DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S ;

SERRANO, C .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[4]

DEMPSEY JJ, UNPUBLISHED

[5]

DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[6]

FRISCH MA, 1980, REV SCI INSTRUM, V51, P6

[7] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

GEIPEL, HJ ;

HSIEH, N ;

ISHAQ, MH ;

KOBURGER, CW ;

WHITE, FR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[8] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J].

MILLER, RJ .

THIN SOLID FILMS, 1980, 72 (03) :427-432

[9] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

[10] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :350-356

← 1 2 →