IMPURITY CONDUCTION IN SILICON

被引:60
作者
RAY, RK
FAN, HY
机构
来源
PHYSICAL REVIEW | 1961年 / 121卷 / 03期
关键词
D O I
10.1103/PhysRev.121.768
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:768 / &
相关论文
共 45 条
[11]   EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
LARKHOROVITZ, K .
PHYSICAL REVIEW, 1959, 113 (04) :999-1001
[13]   ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H .
PHYSICAL REVIEW, 1955, 99 (02) :406-419
[14]   THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H ;
LARKHOROVITZ, K .
PHYSICA, 1954, 20 (10) :834-844
[15]   INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DOLEIDEN, FH .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1264-1265
[16]  
FULLER CS, 1954, PHYS REV, V96, P833
[17]   INTERACTIONS BETWEEN SOLUTES IN GERMANIUM AND SILICON [J].
FULLER, CS .
CHEMICAL REVIEWS, 1959, 59 (01) :65-87
[18]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].
FULLER, CS ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436
[19]  
Gudden B., 1935, Z TECH PHYS, V16, P323
[20]  
HANNAY NB, 1959, SEMICONDUCTORS AMERI, P217