IMPURITY CONDUCTION IN SILICON

被引:60
作者
RAY, RK
FAN, HY
机构
来源
PHYSICAL REVIEW | 1961年 / 121卷 / 03期
关键词
D O I
10.1103/PhysRev.121.768
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:768 / &
相关论文
共 45 条
[1]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[2]  
BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[3]   IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J].
BLAKEMORE, JS .
PHILOSOPHICAL MAGAZINE, 1959, 4 (41) :560-576
[4]  
BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87
[5]   IMPURITY CENTERS IN GE AND SI [J].
BURTON, JA .
PHYSICA, 1954, 20 (10) :845-854
[6]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[7]   ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J].
CARLSON, RO .
PHYSICAL REVIEW, 1955, 100 (04) :1075-1078
[8]   IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].
CONWELL, EM .
PHYSICAL REVIEW, 1956, 103 (01) :51-60
[9]   ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1952, 88 (04) :893-894
[10]   ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 80 (06) :1104-1105