STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSB EPITAXIAL-FILMS GROWN ON GAAS BY LOW-PRESSURE MOCVD

被引：12

作者：

YOO, BS ^{[1
]}

MCKEE, MA ^{[1
]}

KIM, SG ^{[1
]}

LEE, EH ^{[1
]}

机构：

[1] EMCORE CORP,SOMERSET,NJ 08873

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 06期

关键词：

D O I：

10.1016/0038-1098(93)90611-P

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InSb heteroepitaxial films have been grown on GaAs by low-pressure(LP) MOCVD and the structural and electrical properties, thereof have been investigated. For 1.5-2.0 mu m thick InSb heteroepitaxial films, the FWHM of the DCRC ranges from 420 to 894 arcsec and the 77 K electron Hall mobilities are inversely proportional to the square of the rocking-curve width. This result suggests that the electron mobility is limited to the scattering by dislocations. The scattering by the charged dislocations explains the mobility-temperature characteristics of the film having larger rocking-curve width.

引用

页码：447 / 450

页数：4

共 13 条

[1]

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[2] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].