REVERSE-BIAS CHARACTERISTICS OF A P+-N-N+ PHOTODIODE

被引：15
作者：
TANDON, JC
ROULSTON, DJ
CHAMBERLAIN, SG
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 06期
关键词：
D O I：
10.1016/0038-1101(72)90011-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：669 / +
页数：1
相关论文
共 11 条
[1]   ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J].
ARANDJELOVIC, V .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :865-+
[2]  
ARANDJELOVIC V, 1969, THESIS U LONDON
[3]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[4]   AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].
DEMARI, A .
SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+
[5]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[6]   UHF PHOTOPARAMETRIC AMPLIFIER [J].
GRACE, MI ;
SAWYER, DE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :901-&
[7]   CONDITIONS AT A P-N JUNCTION IN THE PRESENCE OF COLLECTED CURRENT [J].
MIDDLEBROOK, RD .
SOLID-STATE ELECTRONICS, 1963, 6 (06) :555-571
[8]   PHOTOPARAMETRIC AMPLIFIER [J].
PENFIELD, P ;
SAWYER, DE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04) :340-&
[9]   LOW-NOISE PHOTOPARAMETRIC UP-CONVERTER [J].
ROULSTON, DJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (04) :431-&
[10]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
12