AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE

被引:17
|
作者
KANEDA, T [1 ]
KAGAWA, S [1 ]
MIKAWA, T [1 ]
TOYAMA, Y [1 ]
ANDO, H [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
关键词
D O I
10.1063/1.91550
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:572 / 574
页数:3
相关论文
共 50 条
  • [1] A LOW-NOISE N+NP GERMANIUM AVALANCHE PHOTO-DIODE
    MIKAWA, T
    KAGAWA, S
    KANEDA, T
    SAKURAI, T
    ANDO, H
    MIKAMI, O
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 210 - 216
  • [2] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION
    KANBE, H
    SUSA, N
    NAKAGOME, H
    ANDO, H
    ELECTRONICS LETTERS, 1980, 16 (05) : 163 - 165
  • [3] DARK CURRENT NOISE PROPERTIES OF A GERMANIUM AVALANCHE PHOTO-DIODE
    KANBE, H
    GROSSKOPF, G
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L767 - L770
  • [4] GE AVALANCHE PHOTO-DIODE
    ANDO, H
    KANBE, H
    KIMURA, T
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1979, 27 (7-8): : 586 - 598
  • [5] AVALANCHE PHOTO-DIODE AS A PULSE RECEIVER
    TRISHENKOV, MA
    RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (08): : 1649 - 1659
  • [6] PLANAR EPITAXIAL SILICON AVALANCHE PHOTO-DIODE
    MELCHIOR, H
    HARTMAN, AR
    SCHINKE, DP
    SEIDEL, TE
    BELL SYSTEM TECHNICAL JOURNAL, 1978, 57 (06): : 1791 - 1807
  • [8] THE PHOTO-DIODE AND PHOTO-PEAK CHARACTERISTICS IN GERMANIUM
    BENZER, S
    PHYSICAL REVIEW, 1946, 70 (1-2): : 105 - 105
  • [9] INGAASP-INP AVALANCHE PHOTO-DIODE
    TAKANASHI, Y
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2065 - 2066
  • [10] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE
    LAW, HD
    TOMASETTA, LR
    NAKANO, K
    APPLIED PHYSICS LETTERS, 1978, 33 (11) : 920 - 922