EFFECTIVE MASS FOR STRAINED P-TYPE SI1-XGEX

被引：59

作者：

MANKU, T

NATHAN, A

机构：

[1] Department of Electrical and Computer Engineering, University of Waterloo, Waterloo

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.347409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density of states and carrier concentration effective masses have been calculated for strained p-type nondegenerate Si1-xGe(x) using the band structure recently proposed by Manku and Nathan (Phys. Rev. B). The results show a significant decrease in both masses compared to pure silicon. It turns out that the total carrier concentration effective mass for a Ge composition, x = 0.3 is approximately three times smaller than the corresponding value for silicon. At 300 K, the total carrier concentration effective mass is 0.35 (normalized with the free electron mass) and at 77 K, the corresponding value is 0.22.

引用

页码：8414 / 8416

页数：3