ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE-SEMICONDUCTORS

被引：23
作者：
GHATAK, KP [1 ]
CHATTOPADHYAY, N [1 ]
MONDAL, M [1 ]
机构：
[1] UNIV CALCUTTA,COLL SCI & TECHNOL,DEPT PHYS,CALCUTTA 700009,W BENGAL,INDIA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 04期
关键词：
D O I：
10.1007/BF00624597
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：305 / 312
页数：8
相关论文
共 32 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]  
[Anonymous], 1982, BAND STRUCTURE SEMIC
[3]  
Antcliffe GA, 1971, P INT C PHYS SEMIMET, P499
[4]   JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J].
BERNARD, W ;
ROTH, H ;
SCHMID, AP ;
ZELDES, P .
PHYSICAL REVIEW, 1963, 131 (02) :627-&
[5]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6]   EFFECT OF A QUANTIZING MAGNETIC-FIELD ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON SMALL GAP SEMICONDUCTORS [J].
CHAKRAVARTI, AN ;
CHOWDHURY, AK ;
GHATAK, KP ;
DHAR, A ;
CHOUDHURY, DR .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1981, 31 (08) :905-912
[7]  
Chemla D. S., 1971, Optics Communications, V3, P29, DOI 10.1016/0030-4018(71)90207-0
[8]   DIFFUSION, EINSTEIN FORMULA AND MECHANICS [J].
EMCH, GG .
JOURNAL OF MATHEMATICAL PHYSICS, 1973, 14 (12) :1775-1783
[9]  
Hatchel G.D., 1968, IEEE T ELECTRON DEV, V15, P437
[10]   HIGHER-ORDER EINSTEIN RELATIONS FOR NON-LINEAR CHARGE TRANSPORT [J].
HOPE, SA ;
FEAT, G ;
LANDSBERG, PT .
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1981, 14 (09) :2377-2390
1234