EPITAXIAL-GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 250-DEGREES-C

被引：31

作者：

NAGAMINE, K

YAMADA, A

KONAGAI, M

TAKAHASHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.L951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L951 / L953

页数：3

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