EPITAXIAL-GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 250-DEGREES-C

被引：31
作者：
NAGAMINE, K
YAMADA, A
KONAGAI, M
TAKAHASHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 06期
关键词：
D O I：
10.1143/JJAP.26.L951
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L951 / L953
页数：3
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