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- [1] EPITAXIAL-GROWTH OF SILICON BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 200-DEGREES-CAPPLIED PHYSICS LETTERS, 1986, 49 (02) : 79 - 81NISHIDA, SSHIIMOTO, TYAMADA, AKARASAWA, SKONAGAI, MTAKAHASHI, K
- [2] VERY LOW-TEMPERATURE (250-DEGREES-C) EPITAXIAL-GROWTH OF SILICON BY GLOW-DISCHARGE OF SILANEAPPLIED PHYSICS LETTERS, 1987, 51 (23) : 1922 - 1924BAERT, KSYMONS, JVANDERVORST, WVANHELLEMONT, JCAYMAX, MPOORTMANS, JNIJS, JMERTENS, R
- [3] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1988, 52 (17) : 1389 - 1391MEAKIN, DSTOBBS, MSTOEMENOS, JECONOMOU, NA
- [4] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1988, 52 (13) : 1053 - 1055MEAKIN, DSTOBBS, MSTOEMENOS, JECONOMOU, NA
- [5] SELECTIVE SI EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION AT VERY LOW-TEMPERATUREAPPLIED PHYSICS LETTERS, 1992, 60 (04) : 442 - 444BAERT, KDESCHEPPER, PPOORTMANS, JNIJS, JMERTENS, R
- [6] EPITAXIAL-GROWTH OF HGTE BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C176 - C176WANG, CHLU, PYWILLIAMS, LMCHU, SNG
- [7] EPITAXIAL GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR DEPOSITION AT A VERY LOW TEMPERATURE OF 250 degree C.Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (06):Nagamine, KunihiroYamada, AkiraKonagai, MakotoTakahashi, Kiyoshi
- [8] LOW-TEMPERATURE PRETREATMENT IN CHEMICAL VAPOR-DEPOSITION OF A SILICON FILM FOR SOLID-PHASE EPITAXIAL-GROWTHJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10): : L1983 - L1985ISHII, KHAYASHI, Y
- [9] EPITAXIAL-GROWTH OF GERMANIUM ON SILICON BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A28 - A28GREEN, MLALI, YSBRASEN, DWILLENS, RH