A MODEL FOR CONDUCTOR FAILURE CONSIDERING DIFFUSION CONCURRENTLY WITH ELECTROMIGRATION RESULTING IN A CURRENT EXPONENT OF 2

被引:214
作者
SHATZKES, M
LLOYD, JR
机构
关键词
D O I
10.1063/1.336731
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3890 / 3893
页数:4
相关论文
共 26 条
[1]  
ABRAMOWITZ M, HDB MATH FUNCTIONS, P1023
[2]   ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].
ATTARDO, MJ ;
ROSENBERG, R .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+
[3]   SURFACE TOPOLOGY CHANGES DURING ELECTROMIGRATION IN METALLIC THIN FILM STRIPES [J].
BERENBAUM, L ;
ROSENBERG, R .
THIN SOLID FILMS, 1969, 4 (03) :187-+
[4]  
Black J.R, 1967, IEEE IRPS, P148
[5]   ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J].
BLACK, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :338-&
[6]   CONCERNING ELECTROMIGRATION IN THIN FILMS [J].
BLAIR, JC ;
GHATE, PB ;
HAYWOOD, CT .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (06) :1023-&
[7]   ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS [J].
BLAIR, JC ;
GHATE, PB ;
HAYWOOD, CT .
APPLIED PHYSICS LETTERS, 1970, 17 (07) :281-&
[8]   MODIFIED RELIABILITY EXPRESSION FOR ELECTROMIGRATION TIME TO FAILURE [J].
BOBBIO, A ;
SARACCO, O .
MICROELECTRONICS AND RELIABILITY, 1975, 14 (5-6) :431-433
[9]   ELECTROMIGRATION TESTING - CURRENT PROBLEM [J].
BRAUN, L .
MICROELECTRONICS AND RELIABILITY, 1974, 13 (03) :215-228
[10]  
d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243