SURFACE IMPURITY GRADIENTS IN EPITAXIAL GAAS

被引：15

作者：

NICHOLS, KH

GOLDWASSER, RE

WOLFE, CM

机构：

[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

[2] WASHINGTON UNIV,SEMICOND RES LAB,ST LOUIS,MO 63130

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：601 / 603

页数：3

共 16 条

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[4] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[5]

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[6]

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[8] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J].

MAGEE, TJ ;

PENG, J ;

HONG, JD ;

EVANS, CA ;

DELINE, VR ;

MALBON, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :277-279

[9] DIRECT DETERMINATION OF SYMMETRY OF CR IONS IN SEMI-INSULATING GAAS SUBSTRATES THROUGH ANISOTROPIC BALLISTIC-PHONON PROPAGATION AND ATTENUATION [J].

NARAYANAMURTI, V ;

CHIN, MA ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :481-483

[10]

NICHOLS KH, UNPUBLISHED

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