SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION

被引：61

作者：

SPITZER, WG

PANISHI, MB

机构：

[1] Materials Science and Electrical Engineering Departments, University of Southern California, Los Angeles

[2] Bell Telephone Laboratories, Inc., Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 10期

关键词：

D O I：

10.1063/1.1657165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：4200 / &

共 10 条

[1]

ELLIOTT RJ, 1967, J PHYS CHEM SOLIDS, V28, P1627

[2]

HAYASHI I, UNPUBLISHED RESULTS

[3] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[4]

KRESSEL H, 1969, 135 M EL SOC NEW YOR

[5] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3687-+

[6] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS [J].

MORIIZUMI, T ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) :348-+

[7]

PANISH MB, UNPUBLISHED

[8]

RUPPRECHT H, 1966, APPL PHYS LETT, V9, P6

[9] LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

SPITZER, WG ;

ALLRED, W .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :4999-&

[10] SITE TRANSFER OF SI IN GAAS [J].

SPITZER, WG ;

ALLRED, W .

APPLIED PHYSICS LETTERS, 1968, 12 (01) :5-&

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