STRAPPING ANALYSIS IN GALLIUM ARSENIDE

被引：31

作者：

CARBALLES, JC

LEBAILLY, J

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(68)90025-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：167 / +

页数：1

共 8 条

[1] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

[2]

Bube RH., 1960, PHOTOCONDUCTIVITY SO

[3]

CARBALLES JC, 1967, THESIS FACULTE SCIEN

[4]

FERTIN J, 1967, 1966 P S GALL ARS, P46

[5] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

QUEISSER, HJ ;

FULLER, CS .

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[7]

WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387

[8] DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE [J].

WILLIAMS, R .