REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：14

作者：

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / &

共 50 条

[31] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. ELECTRICAL EFFECTS IN PN DIODES
VARKER, CJ
RAVI, KV
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 272 - 287
[32] OXYGEN-PRESSURE DEPENDENCE OF RETROGROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN (100) SILICON
MURARKA, SP
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2513 - 2516
[33] ELECTRICAL-ACTIVITY OF OXIDATION-INDUCED STACKING-FAULTS IN CCDS
VANDERSPIEGEL, J
DECLERCK, GJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C355 - C355
[34] SUPPRESSION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON
HERRING, RG
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 449 - 449
[35] ANNIHILATION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON
RAVI, KV
PHILOSOPHICAL MAGAZINE, 1974, 30 (05): : 1081 - 1090
[36] COMPUTER-SIMULATION OF X-RAY TOPOGRAPHS OF STACKING-FAULTS IN SILICON
WONSIEWICZ, BC
PATEL, JR
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1975, 8 (FEB1) : 67 - 68
[37] EFFECT OF DOPANT CONCENTRATION ON OXIDATION-INDUCED STACKING-FAULTS IN BORON-DOPED CZ SILICON
CHICHIBU, S
HARADA, T
MATSUMOTO, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1543 - L1545
[38] NUCLEATION MECHANISM FOR OXIDATION-INDUCED STACKING-FAULTS IN SILICON-CRYSTALS CONTAINING SURFACE DAMAGE
SHEVLIN, CM
DEMER, LJ
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 40 (05): : 685 - 699
[39] CHARACTERIZATION OF EPITAXIAL AND OXIDATION-INDUCED STACKING-FAULTS IN SILICON - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION
HIGGS, V
GOULDING, M
BRINKLOW, A
KIGHTLEY, P
APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1369 - 1371
[40] EFFECT OF OXIDATION-INDUCED STACKING-FAULTS ON DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL SILICON DIOXIDE
SHIRAI, H
KANAYA, K
YAMAGUCHI, A
SHIMURA, F
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5651 - 5653

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