REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：14

作者：

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / &

共 50 条

[21] SURFACE VERSUS BULK NUCLEATED OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
ROZGONYI, GA
SEIDEL, TE
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (03) : 359 - 363
[22] INFLUENCE OF PHOSPHORUS DIFFUSION ON GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C141 - C141
[23] OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
CASTALDINI, A
CAVALLINI, A
EVANS, JH
HAWKINS, ID
PEAKER, AR
VANDINI, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 170 - 174
[24] SCANNING ELECTRON-MICROSCOPIC OBSERVATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
KAWADO, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : 1591 - 1602
[25] MINORITY AND MAJORITY CARRIER TRAPS ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
EVANS, JH
DAVIDSON, JA
SARITAS, M
VANDINI, M
QIAN, Y
PEAKER, AR
MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (07) : 696 - 701
[26] LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
DAVIDSON, JA
EVANS, JH
PEAKER, AR
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 167 - 169
[27] PRE-OXIDATION GETTERING OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY THE PHOSPHORUS DIFFUSION PROCESS
CHEN, JH
CHEN, MC
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (06) : 555 - 560
[28] OXIDATION-ENHANCED OR RETARDED DIFFUSION AND THE GROWTH OR SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
TAN, TY
GOSELE, U
APPLIED PHYSICS LETTERS, 1982, 40 (07) : 616 - 619
[29] EFFECTS OF CL+ AND F+ IMPLANTATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
XU, JY
BRONSVELD, PM
BOOM, G
DEHOSSON, JTM
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3485 - 3489
[30] On the origins of oxidation-induced stacking faults in silicon
Monson, TK
Van Vechten, JA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (02) : 741 - 743

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