REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：14

作者：

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / &

共 50 条

[1] Photoluminescence and X-ray topography measurements on oxidation-induced stacking faults in silicon wafers
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[7] A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
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[8] NUCLEATION OF OXIDATION-INDUCED STACKING-FAULTS FROM MECHANICAL DAMAGE IN SILICON
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[9] INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
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[10] INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS
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