INFLUENCE OF THE SUBSTRATE MORPHOLOGY ON POROUS SILICON FORMATION

被引：13

作者：

DIFRANCIA, G

机构：

[1] ENEA-Centro Ricerche Fotovoltaiche Loc. Granatello P.O. Box 32

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 05期

关键词：

D O I：

10.1016/0038-1098(93)90796-P

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Porous Silicon Layers fabricated in the same electrochemical conditions on substrate of different roughness are studied.A correlation between roughness and film porosity is found.The I-V behaviour of Silicon/HF systems at different substrate roughnesses is also investigated. At a given anodic current, a decrease of the established voltage, for increasing roughness occurs. Data are explained modeling the Silicon/HF system as a Schottky diode.

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页码：451 / 453

页数：3

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