ELECTRONIC STATES AND ATOMIC-STRUCTURE AT THE PD2SI-SI INTERFACE

被引：58

作者：

SCHMID, PE

HO, PS

FOLL, H

RUBLOFF, GW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：937 / 943

页数：7

共 18 条

[1]

ABBATI I, 1980, 4TH P ICSS 3RD ECSS, P1023

[2]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].

BUCKLEY, WD ;

MOSS, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&

[4]

FOELL H, UNPUBLISHED

[5] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :916-919

[6] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[7] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :924-929

[8] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].

HO, PS ;

RUBLOFF, GW ;

LEWIS, JE ;

MORUZZI, VL ;

WILLIAMS, AR .

PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

TAN, TY ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[10] CALCULATION OF THE ELECTRONIC-STRUCTURE OF THE AMORPHOUS PD80SI20 SYSTEM [J].

KELLY, MJ ;

BULLETT, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13) :2531-2541

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