INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFET(S) BY A THRESHOLD-VOLTAGE METHOD

[1] TRANSIENT-BEHAVIOR OF SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) : 518 - 520

[2] A CV TECHNIQUE FOR MEASURING THIN SOI FILM THICKNESS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 453 - 455

[3] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFETS BY THE DYNAMIC TRANSCONDUCTANCE TECHNIQUE [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 430 - 432

[4] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[5] SCHRODER DK, 1990, SEMICONDUCTOR MATERI

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO

[7] TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[8] Tsividis YP., 1988, OPERATION MODELING M

[9] A SIMPLE ELECTRICAL METHOD TO DETERMINE THE SI AND OXIDE THICKNESSES IN SOI MATERIALS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 427 - 429

[10] CHARACTERIZATION OF FRONT AND BACK SI-SIO2 INTERFACES IN THICK-FILM AND THIN-FILM SILICON-ON-INSULATOR MOS STRUCTURES BY THE CHARGE-PUMPING TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1746 - 1750

[1] TRANSIENT-BEHAVIOR OF SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) : 518 - 520

[2] A CV TECHNIQUE FOR MEASURING THIN SOI FILM THICKNESS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 453 - 455

[3] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFETS BY THE DYNAMIC TRANSCONDUCTANCE TECHNIQUE [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 430 - 432

[4] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[5] SCHRODER DK, 1990, SEMICONDUCTOR MATERI

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO

[7] TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[8] Tsividis YP., 1988, OPERATION MODELING M

[9] A SIMPLE ELECTRICAL METHOD TO DETERMINE THE SI AND OXIDE THICKNESSES IN SOI MATERIALS [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 427 - 429

[10] CHARACTERIZATION OF FRONT AND BACK SI-SIO2 INTERFACES IN THICK-FILM AND THIN-FILM SILICON-ON-INSULATOR MOS STRUCTURES BY THE CHARGE-PUMPING TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1746 - 1750