DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON

被引：74

|

作者：

CRANDALL, RS

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.24.7457

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：7457 / 7459

页数：3

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