TEMPERATURE-DEPENDENCE OF AUGER LIFETIME IN HEAVILY-DOPED HG1-XCDXTE

被引：0
作者：
DE, SS
GHOSH, AK
HALDER, JC
BERA, M
HAZRA, AK
机构：
[1] Centre of Advanced Study in Radio Physics and Electronics, Calcutta-700 009
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 11期
关键词：
D O I：
10.1063/1.355106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An expression for Auger lifetime as a function of temperature has been derived for a heavily doped Hg1-xCdxTe in the presence of a nonparabolicity of band structure, band gap narrowing, and carrier degeneracy. It is utilized to study the variation of Auger lifetime with temperature through numerical analysis.
引用
收藏
页码：6642 / 6644
页数：3
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