A STUDY OF CURRENT TRANSPORT IN P-N-HETEROJUNCTIONS

被引：13
作者：
CHEN, SC
SU, YK
LEE, CZ
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 09期
关键词：
D O I：
10.1016/0038-1101(92)90166-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current transport in abrupt and graded p-N heterojunction diodes is studied by employing the thermionic field-diffusion model. The tunneling effect in p-N heterojunctions is treated with a numerical solution of Schrodinger's equation. We have demonstrated that the resonant tunneling effect exists in p-N heterojunctions. For comparison, different models are applied to simulate the I-V characteristics of three different p-N heterostructures. Good design of an inserted layer between the p- and N-layers is required to obtain high injection efficiency. For the AlGaAs/GaAs system, graded heterojunctions with W(g) > 100 angstrom and abrupt heterojunctions with setback layers with W(i) > 50 angstrom increase the injection efficiency in accordance with the theoretical calculations.
引用
收藏
页码：1311 / 1323
页数：13
相关论文
共 19 条
[1]   ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ANKRI, D ;
AZOULAY, R ;
CAQUOT, E ;
DANGLA, J ;
DUBON, C ;
PALMIER, JF .
SOLID-STATE ELECTRONICS, 1986, 29 (02) :141-149
[2]   GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
ANKRI, D ;
EASTMAN, LF .
ELECTRONICS LETTERS, 1982, 18 (17) :750-751
[3]   ELECTRICAL BEHAVIOR OF DOUBLE HETEROJUNCTION NPN GAALAS/GAAS/GAALAS BIPOLAR-TRANSISTORS [J].
BAILBE, JP ;
MARTY, A ;
REY, G ;
TASSELLI, J ;
BOUYAHYAOUI, A .
SOLID-STATE ELECTRONICS, 1985, 28 (06) :627-638
[4]   DOPING EFFECTS AND COMPOSITIONAL GRADING IN AL GA1-AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
CHAND, N ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1064-1069
[5]  
CHEN CZ, 1987, IEEE T ELECTRON DEV, V34, P1463, DOI 10.1109/T-ED.1987.23107
[6]   SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].
CHEUNG, DT ;
CHIANG, SY ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266
[7]   NUMERICAL STUDY OF EMITTER-BASE JUNCTION DESIGN FOR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
DAS, A ;
LUNDSTROM, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :863-870
[8]  
Datta S., 1989, MODULAR SERIES SOLID, VVIII
[9]   AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
GRINBERG, AA ;
SHUR, MS ;
FISCHER, RJ ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1758-1765
[10]   MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
KURATA, M ;
YOSHIDA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :467-473
12