SUBHARMONIC GENERATION AND TRAPPED-PLASMA MODE IN AVALANCHING SILICON P+-N-N+ JUNCTIONS

被引：11
作者：
SNAPP, CP
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 05期
关键词：
D O I：
10.1109/T-ED.1971.17190
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：294 / +
页数：1
相关论文
共 36 条
[1]   AVALANCHE SHOCK FRONTS IN P-N JUNCTIONS [J].
BARTELINK, DJ ;
SCHARFETTER, DL .
APPLIED PHYSICS LETTERS, 1969, 14 (10) :320-+
[2]   AVALANCHE SHOCK FRONTS IN P-N JUNCTIONS [J].
BARTELINK, DJ ;
SCHARFETTER, DL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :596-+
[3]   SPACE-CHARGE-INDUCED NEGATIVE RESISTANCE IN AVALANCHE DIODES [J].
BOWERS, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) :343-+
[4]   SELF-PUMPED PARAMETRIC AMPLIFICATION WITH AN AVALANCHING DIODE [J].
CLORFEINE, AS .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12) :1956-+
[5]  
CLORFEINE AS, 1969, RCA REV, V30, P397
[6]   THEORY FOR POWER OUTPUT AND EFFICIENCY OF SILICON TRAPATT OSCILLATORS [J].
COTTAM, MG .
ELECTRONICS LETTERS, 1970, 6 (12) :384-&
[7]   THEORY FOR HIGH-EFFICIENCY OSCILLATIONS IN SILICON AVALANCHE DIODES [J].
COTTAM, MG .
ELECTRONICS LETTERS, 1970, 6 (07) :203-&
[8]   LOW-FREQUENCY OPERATION OF AVALANCHE DIODES UNDER LARGE-SIGNAL CONDITIONS [J].
CULSHAW, B .
ELECTRONICS LETTERS, 1969, 5 (23) :583-&
[9]  
CULSHAW B, TO BE PUBLISHED
[10]   DEVICE PHYSICS OF TRAPATT OSCILLATORS [J].
DELOACH, BC ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :9-+
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